Angebot 54 von 66 vom 22.12.2021, 07:59


Tech­ni­sche Uni­ver­si­tät Dres­den - Faculty of Elec­tri­cal and Com­pu­ter Engi­nee­ring, Insti­tute of Cir­cuits and Sys­tems, Chair of Elec­tron Devices and Inte­gra­ted Cir­cuits

Tech­ni­sche Uni­ver­si­tät Dres­den as a Uni­ver­sity of Excel­lence is one of the lea­ding uni­ver­si­ties in Ger­many, and is ran­ked among the 100 most inno­va­tive uni­ver­si­ties world­wide. Its dis­tin­guis­hing fea­ture is a strong focus on rese­arch as well as its diver­si­fied offer of more than 120 degree pro­grams in Engi­nee­ring Sci­en­ces, Natu­ral Sci­en­ces, Huma­nities & Social Sci­en­ces and Medi­cine.

It pur­sues a long-term over­all deve­lop­ment pro­gram aimed at making TU Dres­den an inter­na­tio­nal top uni­ver­sity.

Rese­arch Asso­ciate (m/f/x)

(sub­ject to per­so­nal qua­li­fi­ca­tion employees are remu­ne­ra­ted accord­ing to salary group E 13 TV-L)

At TU Dres­den, Faculty of Elec­tri­cal and Com­pu­ter Engi­nee­ring, Insti­tute of Cir­cuits and Sys­tems the Chair of Elec­tron Devices and Inte­gra­ted Cir­cuits (CEDIC) offers a pro­ject posi­tion star­ting as soon as pos­si­ble. The posi­tion is limi­ted for 36 mon­ths with the option of exten­sion sub­ject to fur­ther third-party fun­ded pro­jects. The period of employ­ment is gover­ned by § 2 (2) Fixed Term Rese­arch Con­tracts Act (Wis­sen­schafts­zeit­ver­trags­ge­setz - WissZeitVG).
CEDIC has been an inter­na­tio­nally reco­gni­zed rese­arch group in the area of device mode­ling for high-fre­quency (HF) app­li­ca­ti­ons, with signi­fi­cant con­tri­bu­ti­ons in par­ti­cu­lar to the theo­re­ti­cal under­stan­ding and explo­ra­tion of high-fre­quency per­for­mance and phy­si­cal limits of hete­ro­junc­tion bipo­lar tran­sis­tors and car­bon nanotube based field-effect tran­sis­tors (CNT­FETs) as well as to the deve­lop­ment of rela­ted models and tools for cir­cuit design. CEDIC has also been invol­ved in various rese­arch pro­jects fun­ded by the Ger­man Natio­nal Sci­ence Foun­da­tion (DFG), Ger­man Federal government, the European Union and DARPA.

Working field:

The suc­cess­ful can­di­date is expec­ted to con­tri­bute to a DFG fun­ded rese­arch pro­ject on ultra-sca­led SiGeC HBTs bey­ond the exis­ting road­map. Spe­ci­fic tasks com­prise: (i) Deter­mi­na­tion of trans­port rela­ted mate­rial pro­per­ties in extre­mely sca­led (nm scale) HBT lay­ers based on ato­mistic simu­la­tion and expe­ri­men­tal data; (ii) Deve­lop­ment of cor­re­spon­ding phy­si­cal models for use in semi-clas­si­cal device simu­la­tion (such as BTE, DD) for explo­ring the impact of sca­ling of the ver­ti­cal HBT struc­ture on its elec­tri­cal cha­rac­te­ris­tics. (iii) Explo­ra­tion of the impact of ran­dom ato­mic arran­ge­ment in ultra-thin lay­ers on the varia­tion of elec­tri­cal SiGeC HBT device and cir­cuit per­for­mance bey­ond stan­dard pro­cess tole­ran­ces. (iv) Brid­ging the gap bet­ween mate­rial sci­ence and elec­tri­cal engi­nee­ring by estab­li­shing a multi-scale simu­la­tion capa­bi­lity span­ning from ato­mistic to cir­cuit simu­la­tion. The work requi­res a strong coope­ra­tion wit­hin a team of rese­ar­chers at CEDIC and at the pro­ject coope­ra­tion part­ners. Par­ti­ci­pa­tion in pro­gress reports, pre­sen­ta­ti­ons at pro­ject mee­tings and publi­ca­ti­ons is expec­ted.


Applic­ants should hold an out­stand­ing uni­versity degree (Mas­ter/Dipl.-Ing.) in solid-state phys­ics with focus on semi­con­ductor elec­tron­ics. Exper­i­ence in the fol­low­ing areas is man­dat­ory: car­rier trans­port phys­ics in elec­tronic devices; com­pu­ta­tional phys­ics, prefer­ably hands-on exper­i­ence with numer­ical device sim­u­la­tion (TCAD) tools such as Boltzmann trans­port equa­tion and drift-dif­fu­sion solv­ers. Addi­tional know­ledge on HBT oper­a­tion prin­ciples and semi­con­ductor tech­no­logy as well as on atom­istic sim­u­la­tion will be a pre­requis­ite for a suc­cess­ful applic­a­tion. Excel­lent Eng­lish lan­guage and com­mu­nic­a­tion skills are highly desired.

How to apply:

App­li­ca­ti­ons from women are par­ti­cu­larly wel­come. The same app­lies to people with disa­bi­li­ties.

Your app­li­ca­tion (in Eng­lish only) should include: moti­va­tion let­ter, CV with descrip­tion of com­ple­ted pro­jects in the areas descri­bed above, tran­script of gra­des (i.e. the offi­cial list of cour­se­work inclu­ding your gra­des) and proof of Eng­lish lan­guage skills. Please sub­mit your com­pre­hen­sive app­li­ca­tion by Febru­ary 18, 2022 (stam­ped arri­val date of the uni­ver­sity cen­tral mail ser­vice app­lies), pre­fer­a­bly via the TU Dres­den Secu­re­Mail Por­tal quo­ting “Rese­arch Asso­ciate app­li­ca­tion” in the sub­ject hea­der by sen­ding it as a sin­gle pdf docu­ment to or by mail to: TU Dres­den, Fakul­tät Elek­tro­tech­nik und Infor­ma­ti­ons­tech­nik, Insti­tut für Grund­la­gen der Elek­tro­tech­nik und Elek­tro­nik, Pro­fes­sur für Elek­tro­ni­sche Bau­ele­mente und Inte­grierte Schal­tun­gen, Herrn Prof. Michael Schrö­ter, Helm­holtz­str. 10, 01069 Dres­den. Please sub­mit copies only, as your app­li­ca­tion will not be retur­ned to you. Expen­ses incur­red in atten­ding inter­views can­not be reim­bur­sed.

Refe­rence to data pro­tec­tion: Your data pro­tec­tion rights, the pur­pose for which your data will be pro­ces­sed, as well as fur­ther infor­ma­tion about data pro­tec­tion is avail­able to you on the web­site: